View STU26NM60_5883518.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1/11 february 2002 stw26nm60 STU26NM60, STU26NM60i n-channel 600v - 0.125 w - 26a to-247,max220,max220i zener-protected mdmesh ? power mosfet n typical r ds (on) = 0.125 w n high dv/dt and avalanche capabilities n improved esd capability n low input capacitance and gate charge n low gate input resistance description the mdmesh ? is a new revolutionary mosfet technology that associates the multiple drain pro- cess with the company's powermesh ? horizontal layout. the resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. the adoption of the company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. applications the mdmesh ? family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ordering information type v dss r ds(on) i d stw26nm60 STU26NM60 STU26NM60i 600 v 600 v 600 v < 0.135 w < 0.135 w < 0.135 w 30 a 26 a 26 a sales type marking package packaging stw26nm60 w26nm60 to-247 tube STU26NM60 u26nm60 max220 tube STU26NM60i u26nm60i max220i tube to-247 1 2 3 max220 max220i internal schematic diagram
stw26nm60, STU26NM60, STU26NM60i 2/11 absolute maximum ratings ( l ) pulse width limi ted by safe operating area (1) i sd 26a, di/dt 200a/ m s, v dd v (br)dss ,t j t jmax. (*) limited only by maximum temperature allowed thermal data avalanche characteristics gate-source zener diode protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the device's esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. in this respect the zener voltage is appropriate to achieve an efficient and cost- effective intervention to protect the device's integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter value unit stw 26nm60 STU26NM60 STU26NM60i v ds drain-source voltage (v gs =0) 600 v v dgr drain-gate voltage (r gs =20k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuos) at t c =25 c 30 26 26 (*) a i d drain current (continuos) at t c = 100 c 18.9 16.38 16.38 (*) a i dm ( l ) drain current (pulsed) 120 104 104 (*) a p tot total dissipation at t c =25 c 313 192 73 w derating factor 2.5 1.54 0.58 w/ c v esd(g-s) gate source esd(hbm-c=100pf, r=1.5k w) 6000 v dv/dt (1) peak diode recovery voltage slope 15 v/ns t j t stg operating junction temperature storage temperature -55 to 150 -55 to 150 c c to-247 max220 max220i rthj-case thermal resistance junction-case max 0.4 0.65 1.7 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 13 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =50v) 740 mj symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igss= 1ma (open drain) 30 v
3/11 stw26nm60, STU26NM60, STU26NM60i electrical characteristics (tcase =25 c unless otherwise specified) on/off dynamic switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 m s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a, v gs = 0 600 v i dss zero gate voltage drain current (v gs =0) v ds = max rating v ds = max rating, t c = 125 c 10 100 m a m a i gss gate-body leakage current (v ds =0) v gs = 20v 10 m a v gs(th) gate threshold voltage v ds =v gs ,i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 13 a 0.125 0.135 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15v , i d = 13 a 20 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 2900 900 40 pf pf pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 300v, i d =13a r g = 4.7 w v gs =10v (resistive load see, figure 3) 35 22 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480v, i d =26a, v gs = 10v 73 20 37 102 nc nc nc symbol parameter test condition s min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 480v, i d =26a, r g =4.7 w, v gs = 10v (inductive load see, figure 5) 14 20 40 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 26 104 a a v sd (1) forward on voltage i sd =26a,v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 26 a, di/dt = 100a/ m s v dd = 60v, t j = 150 c (see test circuit, figure 5) 560 9 32.5 ns m c a
stw26nm60, STU26NM60, STU26NM60i 4/11 safe operating area for max220i safe operating area for max220 safe operating area for to-247 thermal impedance for to-247 thermal impedance for max220 thermal impedance for max220i
5/11 stw26nm60, STU26NM60, STU26NM60i transfer characteristics capacitance variations static drain-source on resistance output characteristics gate charge vs gate-source voltage transconductance
stw26nm60, STU26NM60, STU26NM60i 6/11 normalized gate threshold voltage vs temp. source-drain diode forward characteristics normalized on resistance vs temperature
7/11 stw26nm60, STU26NM60, STU26NM60i fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
stw26nm60, STU26NM60, STU26NM60i 8/11 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 d 2.20 2.60 0.08 0.10 e 0.40 0.80 0.015 0.03 f 1 1.40 0.04 0.05 f1 3 0.11 f2 2 0.07 f3 2 2.40 0.07 0.09 f4 3 3.40 0.11 0.13 g 10.90 0.43 h 15.45 15.75 0.60 0.62 l 19.85 20.15 0.78 0.79 l1 3.70 4.30 0.14 0.17 l2 18.50 0.72 l3 14.20 14.80 0.56 0.58 l4 34.60 1.36 l5 5.50 0.21 m 2 3 0.07 0.11 v 5? 5? v2 60? 60? dia 3.55 3.65 0.14 0.143 to-247 mechanical data
9/11 stw26nm60, STU26NM60, STU26NM60i dim. mm inch min. typ. max. min. typ. max. a 4.3 4.6 0.169 0.181 a1 2.2 2.4 0.087 0.094 a2 2.9 3.1 0.114 0.122 b 0.7 0.93 0.027 0.036 b1 1.25 1.4 0.049 0.055 b2 1.2 1.38 0.047 0.054 c 0.45 0.6 0.18 0.023 d 15.9 16.3 0.626 0.641 d1 9 9.35 0.354 0.368 d2 0.8 1.2 0.031 0.047 d3 2.8 3.2 0.110 0.126 e 2.44 2.64 0.096 0.104 e 10.05 10.35 0.396 0.407 l 13.2 13.6 0.520 0.535 l1 3 3.4 0.118 0.133 a a2 a1 c d3 d1 d2 d b1 b2 b e l l1 e p011r max220 mechanical data
stw26nm60, STU26NM60, STU26NM60i 10/11 dim. mm inch min. typ. max. min. typ. max. a 4.3 4.6 0.169 0.181 a1 2.6 2.75 0.102 0.108 a2 1.95 2.15 0.077 0.084 b 0.7 0.93 0.027 0.036 b1 1.25 1.4 0.049 0.055 b2 1.2 1.38 0.047 0.054 c 0.45 0.6 0.017 0.023 d 15.9 16.3 0.626 0.641 d1 12.5 12.9 0.492 0.508 d2 0.6 1 0.023 0.039 d3 1.75 2.15 0.069 0.084 e 2.44 2.64 0.096 0.104 e 10.05 10.35 0.396 0.407 l 13.2 13.6 0.520 0.535 l1 3 3.4 0.118 0.133 p011s i-max220 mechanical data
11/11 stw26nm60, STU26NM60, STU26NM60i information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2001 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com

▲Up To Search▲

Price & Availability of STU26NM60

	To Download STU26NM60 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .